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Philips Semiconductors
Product specification
Rectifier diodes ultrafast, rugged
GENERAL DESCRIPTION
Glass passivated epitaxial rectifier diodes in a full pack plastic envelope, featuring low forward voltage drop, ultra-fast recovery times, soft recovery characteristic and guaranteed reverse surge and ESD capability. They are intended for use in switched mode power supplies and high frequency circuits in general where low conduction and switching losses are essential.
BYW29EX series
QUICK REFERENCE DATA
SYMBOL VRRM VF IF(AV) trr IRRM PARAMETER BYW29EXRepetitive peak reverse voltage Forward voltage Forward current Reverse recovery time Repetitive peak reverse current MAX. 150 150 0.895 8 25 0.2 MAX. 200 200 0.895 8 25 0.2 UNIT V V A ns A
PINNING - SOD113
PIN 1 2 DESCRIPTION cathode anode
PIN CONFIGURATION
case
SYMBOL
k 1
a 2
case isolated
1 2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRRM VRWM VR IF(AV) PARAMETER Repetitive peak reverse voltage Crest working reverse voltage Continuous reverse voltage Average forward current1 square wave; = 0.5; Ths 106 C sinusoidal; a = 1.57; Ths 109 C CONDITIONS MIN. -40 -150 150 150 150 8 7.3 11.3 16 80 88 32 0.2 0.2 150 150 MAX. -200 200 200 200 UNIT V V V A A A A A A A2s A A C C
IF(RMS) IFRM IFSM
I2t IRRM IRSM Tstg Tj
RMS forward current Repetitive peak forward current t = 25 s; = 0.5; Ths 106 C Non-repetitive peak forward t = 10 ms current t = 8.3 ms sinusoidal; with reapplied VRWM(max) I2t for fusing t = 10 ms Repetitive peak reverse current tp = 2 s; = 0.001 Non-repetitive peak reverse tp = 100 s current Storage temperature Operating junction temperature
1 Neglecting switching and reverse current losses October 1998 1 Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes ultrafast, rugged
ESD LIMITING VALUE
SYMBOL VC PARAMETER Electrostatic discharge capacitor voltage CONDITIONS Human body model; C = 250 pF; R = 1.5 k
BYW29EX series
MIN. -
MAX. 8
UNIT kV
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 C unless otherwise specified SYMBOL Visol PARAMETER R.M.S. isolation voltage from both terminals to external heatsink CONDITIONS f = 50-60 Hz; sinusoidal waveform; R.H. 65% ; clean and dustfree MIN. TYP. MAX. 2500 UNIT V
Cisol
Capacitance from both terminals f = 1 MHz to external heatsink
-
10
-
pF
THERMAL RESISTANCES
SYMBOL Rth j-hs Rth j-a PARAMETER Thermal resistance junction to heatsink Thermal resistance junction to ambient CONDITIONS with heatsink compound without heatsink compound in free air MIN. TYP. 55 MAX. 5.5 7.2 UNIT K/W K/W K/W
STATIC CHARACTERISTICS
Tj = 25 C unless otherwise stated SYMBOL VF IR PARAMETER Forward voltage Reverse current CONDITIONS IF = 8 A; Tj = 150C IF = 8 A IF = 20 A VR = VRWM; Tj = 100 C VR = VRWM MIN. TYP. 0.80 0.92 1.1 0.2 2 MAX. 0.895 1.05 1.3 0.6 10 UNIT V V V mA A
DYNAMIC CHARACTERISTICS
Tj = 25 C unless otherwise stated SYMBOL Qs trr1 trr2 Vfr PARAMETER Reverse recovery charge Reverse recovery time Reverse recovery time Forward recovery voltage CONDITIONS IF = 2 A; VR 30 V; -dIF/dt = 20 A/s IF = 1 A; VR 30 V; -dIF/dt = 100 A/s IF = 0.5 A to IR = 1 A; Irec = 0.25 A IF = 1 A; dIF/dt = 10 A/s MIN. TYP. 4 20 15 1 MAX. 11 25 20 UNIT nC ns ns V
October 1998
2
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes ultrafast, rugged
BYW29EX series
I
dI F dt
F
0.5A IF
t
rr time
0A I rec = 0.25A IR trr2
Q I R I
s
10%
100%
rrm
I = 1A R
Fig.1. Definition of trr1, Qs and Irrm
Fig.4. Definition of trr2
I
F
12 10 8
PF / W
Vo = 0.791 V Rs = 0.013 ohms
BYW29
Ths(max) / C D = 1.0
84 95
0.5 0.2 0.1
106 117 128 139
T t
time VF V VF time fr
6 4
I
tp
D=
tp T
2 0
0
2
4
6 IF(AV) / A
8
10
150 12
Fig.2. Definition of Vfr
Fig.5. Maximum forward dissipation PF = f(IF(AV)); square current waveform where IF(AV) =IF(RMS) x D.
PF / W
Vo = 0.791 V Rs = 0.013 Ohms
R
8 7 6
BYW29
Ths(max) / C a = 1.57 1.9 2.2
106 111.5 117 122.5 128 133.5 139 144.5
D.U.T. Voltage Pulse Source
5 4 3 4
2.8
Current shunt
2
to 'scope
1 0 0 1 2 3 4 IF(AV) / A 5 6 7 150 8
Fig.3. Circuit schematic for trr2
Fig.6. Maximum forward dissipation PF = f(IF(AV)); sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV).
October 1998
3
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes ultrafast, rugged
BYW29EX series
trr / ns 1000
100 Qs / nC
100
IF=10A
IF=10A 5A 2A 1A 10
IF=1A 10
1
1.0
1 10 dIF/dt (A/us) 100
1.0
10 -dIF/dt (A/us)
100
Fig.7. Maximum trr at Tj = 25 C.
Fig.10. Maximum Qs at Tj = 25 C.
10
Irrm / A
10
Transient thermal impedance, Zth j-hs (K/W)
IF=10A 1 IF=1A
1
0.1
0.1
0.01
P D tp D= tp T t
0.01 1 10 -dIF/dt (A/us) 100
0.001 1us
T
10us
100us 1ms 10ms 100ms 1s 10s pulse width, tp (s) BYW29F/EX
Fig.8. Maximum Irrm at Tj = 25 C.
Fig.11. Transient thermal impedance; Zth j-hs = f(tp).
30
IF / A Tj=150 C Tj=25 C
BYW29
20
typ 10
max
0 0
0.5
1 VF / V
1.5
2
Fig.9. Typical and maximum forward characteristic IF = f(VF); parameter Tj
October 1998
4
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes ultrafast, rugged
MECHANICAL DATA
Dimensions in mm Net Mass: 2 g
3.2 3.0 10.3 max
BYW29EX series
4.6 max 2.9 max
Recesses (2x) 2.5 0.8 max. depth
2.8 6.4 15.8 19 max. max. seating plane 15.8 max
3 max. not tinned 3 2.5 13.5 min. 1 0.4
M
2 1.0 (2x) 0.6 2.54 5.08 0.5 2.5 0.9 0.7
Fig.12. SOD113; The seating plane is electrically isolated from all terminals.
Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8".
October 1998
5
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes ultrafast, rugged
DEFINITIONS
Data sheet status Objective specification Product specification Limiting values
BYW29EX series
This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
October 1998
6
Rev 1.200

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